2SA1310
2SA1310 is Silicon NPN epitaxial planer type Transistor manufactured by Panasonic.
Features q q q q
Allowing supply with the radial taping. Low noise voltage NV. High foward current transfer ratio h FE. Optimum for high-density mounting. (Ta=25˚C)
Ratings
- 60
- 55
- 7
- 200
- 100 300 150
- 55 ~ +150 Unit V V V m A m A m W ˚C ˚C
1:Emitter 2:Collector 3:Base
1.27 1.27 marking 1 2 3
+0.2 0.45- 0.1
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
2.54±0.15
EIAJ:SC- 72 New S Type Package s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise voltage
(Ta=25˚C)
Symbol ICBO ICEO VCBO VCEO VEBO h FE- VCE(sat) VBE f T NV Conditions VCB =
- 10V, IE = 0 VCE =
- 10V, IB = 0 IC =
- 10µA, IE = 0 IC =
- 2m A, IB = 0 IE =
- 10µA, IC = 0 VCE =
- 5V, IC =
- 2m A IC =
- 100m A, IB =
- 10m A VCE =
- 1V, IC =
- 30m A VCB =
- 5V, IE = 2m A, f = 200MHz VCE =
- 10V, IC =
- 1m A, GV = 80d B Rg = 100kΩ, Function = FLAT 200 150
- 60
- 55
- 7 180 700
- 0.6
- 1 V V MHz m V min typ max
- 0.1
- 1 Unit µA µA V V...