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2SB0819 - Silicon PNP epitaxial planar type Transistor

Features

  • 1.2 IC  VCE Ta = 25°C IB =.
  • 40 mA.
  • 35 mA.
  • 3.5 VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V).
  • 100 IC / IB = 10 Collector power dissipation PC (W) 1.0 Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness.
  • 4.0 Collector current IC (A).
  • 3.0.
  • 2.5.
  • 2.0.
  • 1.5.
  • 1.0 0.8.
  • 30 mA.
  • 25 mA.
  • 20 mA.
  • 15 mA.
  • 10 mA.
  • 5 mA.
  • 10 0.

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Datasheet Details

Part number 2SB0819
Manufacturer Panasonic
File Size 108.22 KB
Description Silicon PNP epitaxial planar type Transistor
Datasheet download datasheet 2SB0819 Datasheet

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Full PDF Text Transcription

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www.DataSheet4U.com Transistors 2SB0819 (2SB819) Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1051 (0.4) Unit: mm 6.9±0.1 (1.5) (1.5) 3.5±0.1 2.5±0.1 (1.0) (1.0) 2.0±0.2 2.4±0.2 1.0±0.1 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature * Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −50 −40 −5 −1.5 −3 1 150 −55 to +150 Unit V V V A A W °C °C 3 (2.5) 2 (2.5) 1 1.25±0.05 ■ Absolute Maximum Ratings Ta = 25°C (0.85) 0.55±0.1 0.45±0.
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