* High collector-emitter voltage (Base open) VCEO
* Low noise voltage NV 0.7±0.1
* Absolute Maximum Ratings Ta = 25°C 0.7±0.2 12.9±0.5 / Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 120 V c type Collector-emitter voltage (Base open) VCEO
2SC1980
Panasonic Semiconductor
218.77 KB
Npn transistor.
Transistors 2SC1980 Silicon NPN epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SA0921 5.0±0.2 Unit: mm .
📁 Related Datasheet
2SC1983 NPN SILICON DARLINGTON TRANSISTOR (Wing Shing Computer Components)
2SC1983L (2SC1983L / 2SC1984L) NPN Silicon General Purpose Transistor (SeCoS Halbleitertechnologie GmbH)
2SC1984L (2SC1983L / 2SC1984L) NPN Silicon General Purpose Transistor (SeCoS Halbleitertechnologie GmbH)
2SC1985 NPN Transistor (INCHANGE)
2SC1985 SILICON POWER TRANSISTOR (SavantIC)
2SC1986 NPN Transistor (INCHANGE)
2SC1986 SILICON POWER TRANSISTOR (SavantIC)
2SC1988 NPN SILICON HIGH FREQUNY TRANSISTOR (NEC)
2SC1904 NPN Transistor (INCHANGE)
2SC1904 SILICON POWER TRANSISTOR (SavantIC)
