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Power Transistors
2SC2497, 2SC2497A
Silicon NPN epitaxial planar type
For low-frequency power amplification Complementary to 2SA1096, 2SC1096A
φ 3.16±0.1
8.0+–00..15
Unit: mm
3.2±0.2
3.8±0.3 11.0±0.5
■ Features
3.05±0.1
• High collector-emitter voltage (Base open) VCEO
• TO-126B package which requires no insulation plate for installation to the heat sink
1.9±0.1 16.0±1.0
■ Absolute Maximum Ratings Ta = 25°C
/ Parameter
Symbol Rating
Unit
e Collector-base voltage (Emitter open) VCBO
70
V
c type) Collector-emitter voltage 2SC2497 VCEO
50
V
n d ge. ed (Base open)
2SC2497A
60
le sta ntinu Emitter-base voltage (Collector open) VEBO
5
V
a e cyc isco Collector current
IC
1.
2SC2497 Datasheet
