φ3.2±0.1
2.0 1.2 10.0 26.5±0.5
4.5
q High breakdown voltage, and high reliability through the use of a
5°
5°
glass passivation layer
q High-speed switching
23.4 22.0±0.5
q Wide area of safe operation (ASO)
5° 5°
4.0
/ s Absolute Maximum Ratings (TC=25˚C)
2.0±0.2
5°
1.1±0.1
e ) Parameter
Symbol
Ratings
Unit
2.0 18.6±0.5
c type Collector to base voltage
VCBO
1700
V
n d stage. tinued Collector to emitter voltage
VCES
3.3±0.3
0.7±0.1
1700
V
le n VCEO
600
V
a elifec.
Full PDF Text Transcription for 2SC5418 (Reference)
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2SC5418. For precise diagrams, and layout, please refer to the original PDF.
Power Transistors 2SC5418 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5±0.5 3.0±0.3 s Features φ3.2±0.1 2.0 1.2 10.0 26.5±0.5 4.5 ...
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it: mm 15.5±0.5 3.0±0.3 s Features φ3.2±0.1 2.0 1.2 10.0 26.5±0.5 4.5 q High breakdown voltage, and high reliability through the use of a 5° 5° glass passivation layer q High-speed switching 23.4 22.0±0.5 q Wide area of safe operation (ASO) 5° 5° 4.0 / s Absolute Maximum Ratings (TC=25˚C) 2.0±0.2 5° 1.1±0.1 e ) Parameter Symbol Ratings Unit 2.0 18.6±0.5 c type Collector to base voltage VCBO 1700 V n d stage. tinued Collector to emitter voltage VCES 3.3±0.3 0.7±0.1 1700 V le n VCEO 600 V a elifecyc disco Emitter to base voltage VEBO 2.0 5.5±0.
2SC5418 Datasheet
