* High breakdown voltage, and high reliability through the use of a glass passivation layer
* High-speed switching
* Wide area of safe operation (ASO) (4.5) (2.0) 18.6±0.5 (2.0) Solder Dip (4.0) 2.0±0.2 1.1±0.1 I Absolute Maximum Ratings TC = 25°C Parameter Collector to
2SC5553
Panasonic Semiconductor
55.38 KB
Npn transistor.
Power Transistors 2SC5553 Silicon NPN triple diffusion mesa type Unit: mm For horizontal deflection output (10.0) 15.5±0.5 φ 3.2±0.1 5° 3.0±0.3 5.
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