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Power Transistors
2SC5905
Silicon NPN triple diffusion mesa type
Horizontal deflection output for TV, CRT monitor
Unit: mm
■ Features
15.5±0.5 φ 3.2±0.1 5˚
3.0±0.3 5˚
(4.5)
26.5±0.5 (2.0)
(1.2) (10.0)
(23.4) 22.0±0.5
• High breakdown voltage: VCBO ≥ 1 700 V
• High-speed switching: tf < 200 ns
• Wide safe operation area
5˚
(4.0)
5˚
2.0±0.2
5˚
■ Absolute Maximum Ratings TC = 25°C
/ Parameter
Symbol Rating
Unit
18.6±0.5 (2.0)
Solder Dip
1.1±0.1
0.7±0.1
5.45±0.3
Collector-base voltage (Emitter open) VCBO
1 700
V
e e) Collector-emitter voltage (E-B short) VCES
1 700
V
c typ Collector-emitter voltage (Base open) VCEO
600
3.3±0.3
5.5±0.3
V
n d stage. tinued Emitter-base voltage (Collector open) VEBO
7
(2.
2SC5905 Datasheet
