* 0.45
* 0.1 +0.2 0.45
* 0.1 1.27 +0.2 V mA mA mW ˚C ˚C 1 2 3 2.3±0.2 V 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO
* 92 EIAJ:SC
* 43A s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter
2SD1010
Panasonic Semiconductor
38.47 KB
Npn transistor.
Transistor 2SD1010 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0±0.2 4.0±0.2 q q q q s Absolute Maximum Ratings Pa.
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