Full PDF Text Transcription for 2SD1005 (Reference)
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2SD1005. For precise diagrams, and layout, please refer to the original PDF.
NPN SILICON EPITAXIAL TRANSISTOR FEATURES High Collector to Base Voltage. Excellent DC Current Gain Linearity. Complements to PNP type 2SB804. Pb Lead-free Producti...
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ain Linearity. Complements to PNP type 2SB804. Pb Lead-free Production specification 2SD1005 ORDERING INFORMATION Type No. Marking 2SD1005 BW/BV/BU SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Unit VCBO VCEO VEBO IC PC Tj Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature 100 80 5 1 500 150 -55 to +150 V V V A mW ℃ ℃ E056 Rev.A www.gmesemi.
2SD1005 Datasheet
