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Panasonic Electronic Components Datasheet

2SD1776A Datasheet

Silicon NPN triple diffusion planar type Transistor

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Power Transistors
2SD1776, 2SD1776A
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
s Features
q High foward current transfer ratio hFE
q Satisfactory linearity of foward current transfer ratio hFE
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SD1776
base voltage 2SD1776A
VCBO
80
100
Collector to 2SD1776
emitter voltage 2SD1776A
VCEO
60
80
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO
ICP
IC
IB
PC
6
4
2
0.5
25
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SD1776
current
2SD1776A
Collector cutoff current
Emitter cutoff current
Collector to emitter 2SD1776
voltage
2SD1776A
ICBO
ICEO
IEBO
VCEO
VCB = 80V, IE = 0
VCB = 100V, IE = 0
VCE = 40V, IB = 0
VEB = 6V, IC = 0
IC = 25mA, IB = 0
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
hFE*
VCE(sat)
VBE(sat)
fT
Cob
ton
tstg
tf
VCE = 4V, IC = 300mA
IC = 1A, IB = 25mA
IC = 1A, IB = 25mA
VCE = 12V, IC = 200mA, f = 10MHz
VCB = 10V, IE = 0, f = 1MHz
IC = 1A, IB1 = 25mA, IB2 = –25mA,
VCC = 50V
*hFE Rank classification
Rank
Q
P
hFE 500 to 1000 800 to 1500
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
min typ max Unit
100
µA
100
100 µA
100 µA
60
V
80
500 1500
1V
1.2 V
40 MHz
30 pF
0.6 µs
2.5 µs
1 µs
1


Panasonic Electronic Components Datasheet

2SD1776A Datasheet

Silicon NPN triple diffusion planar type Transistor

No Preview Available !

Power Transistors
40
35
30
(1)
25
PC — Ta
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2W)
20
15
(2)
10
(3)
5
(4)
0
0 25 50 75 100 125 150
Ambient temperature Ta (˚C)
VBE(sat) — IC
IC/IB=40
10
3
1 TC=–25˚C
0.3
100˚C
25˚C
0.1
0.03
0.01
0.01 0.03 0.1 0.3
1
Collector current IC (A)
3
ton, tstg, tf — IC
100
Pulsed tw=1ms
Duty cycle=1%
30 IC/IB=40 (IB1=–IB2)
VCC=50V
10 TC=25˚C
tstg
3
tf
1
ton
0.3
0.1
0.03
0.01
0
0.5 1.0 1.5 2.0 2.5
Collector current IC (A)
IC — VCE
1.6
TC=25˚C
1.4
IB=3mA
1.2
2mA
1.0
0.8 1mA
0.8mA
0.6
0.6mA
0.4 0.4mA
0.2mA
0.2
0.1mA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2SD1776, 2SD1776A
VCE(sat) — IC
IC/IB=40
10
3 TC=100˚C
1 25˚C
0.3
–25˚C
0.1
0.03
0.01
0.01 0.03 0.1 0.3
1
Collector current IC (A)
3
100000
hFE — IC
30000
10000
3000
1000
300
100
TC=100˚C
25˚C
–25˚C
VCE=4V
30
10
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
1000
300
100
fT — IC
VCE=12V
f=10MHz
TC=25˚C
30
10
3
1
0.3
0.1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
Area of safe operation (ASO)
100
Non repetitive pulse
TC=25˚C
30
10
ICP
3
IC
1
0.3
t=1ms
10ms
DC
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
2


Part Number 2SD1776A
Description Silicon NPN triple diffusion planar type Transistor
Maker Panasonic Semiconductor
Total Page 3 Pages
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