2SD2029
2SD2029 is Silicon NPN Transistor manufactured by Panasonic.
Features q q q q
Satisfactory foward current transfer ratio h FE collector current IC characteristics Wide area of safe operation (ASO) High transition frequency f T Optimum for the output stage of a Hi Fi audio amplifier (TC=25˚C)
Ratings 160 160 5 20 12 120 3.5 150
- 55 to +155 Unit V V V A
26.0±0.5
Solder Dip s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
20.0±0.5 2.5
2.0±0.3 3.0±0.3 1.0±0.2
2.7±0.3
0.6±0.2 5.45±0.3 10.9±0.5
A W ˚C ˚C
1:Base 2:Collector 3:Emitter TOP- 3L Package s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current
(TC=25˚C)
Symbol ICBO IEBO h FE1 h FE2- h FE3 VBE VCE(sat) f T Cob Conditions VCB = 160V, IE = 0 VEB = 3V, IC = 0 VCE = 5V, IC = 20m A VCE = 5V, IC = 1A VCE = 5V, IC = 8A VCE = 5V, IC = 8A IC = 8A, IB = 0.8A VCE = 5V, IC = 0.5A, f = 1MHz VCB = 10V, IE = 0, f = 1MHz 20 210 20 60 20 1.8 2.0 V V MHz p F 200 min typ max 50 50 Unit µA µA
Forward current transfer ratio
Base to emitter voltage Collector to emitter saturation voltage Transition frequency Collector output capacitance
- h
FE2
Rank classification
Q 60 to 120 S 80 to 160 P 100 to 200
Rank h FE2
Power Transistors
- Ta
200 20 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=3.5W) (1) 100
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