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2SD2215A Datasheet

Silicon NPN triple diffusion planar type Transistor

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Power Transistors
2SD2215, 2SD2215A
Silicon NPN triple diffusion planar type
For power amplification
s Features
q High collector to base voltage VCBO
q I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SD2215
base voltage 2SD2215A
VCBO
350
400
Collector to 2SD2215
emitter voltage 2SD2215A
VCEO
250
300
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO
ICP
IC
PC
5
1.5
0.75
15
1.3
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Collector cutoff
current
2SD2215
ICES
2SD2215A
Collector cutoff
current
2SD2215
2SD2215A ICEO
Emitter cutoff current
Collector to emitter 2SD2215
voltage
2SD2215A
IEBO
VCEO
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
hFE1*
hFE2
VBE
VCE(sat)
fT
ton
tstg
tf
Conditions
VCE = 350V, VBE = 0
VCE = 400V, VBE = 0
VCE = 150V, IB = 0
VCE = 200V, IB = 0
VEB = 5V, IC = 0
IC = 30mA, IB = 0
VCE = 10V, IC = 0.3A
VCE = 10V, IC = 1A
VCE = 10V, IC = 1A
IC = 1A, IB = 0.2A
VCE = 5V, IC = 0.5A, f = 10MHz
IC = 1A, IB1 = 0.1A, IB2 = – 0.1A,
VCC = 50V
*hFE1 Rank classification
Rank
Q
P
hFE1 70 to 150 120 to 250
7.0±0.3
3.0±0.2
Unit: mm
3.5±0.2
1.1±0.1
0.75±0.1
0.85±0.1
0.4±0.1
2.3±0.2
4.6±0.4
123
7.0±0.3
2.0±0.2
1:Base
2:Collector
3:Emitter
I Type Package
Unit: mm
3.5±0.2
0 to 0.15
3.0±0.2
1.1±0.1
0.75±0.1
123
2.3±0.2
4.6±0.4
2.5
0.5 max.
0.9±0.1
0 to 0.15
1:Base
2:Collector
3:Emitter
I Type Package (Y)
min typ max Unit
1
mA
1
1
mA
1
1 mA
250
V
300
70 250
10
1.5 V
1V
30 MHz
0.5 µs
2 µs
0.5 µs
1


Panasonic Electronic Components Datasheet

2SD2215A Datasheet

Silicon NPN triple diffusion planar type Transistor

No Preview Available !

Power Transistors
20
(1)
15
PC — Ta
(1) TC=Ta
(2) Without heat sink
(PC=1.3W)
10
5
(2)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IC — VCE
1.2
TC=25˚C
1.0
0.8
IB=14mA
12mA
10mA
0.6 8mA
6mA
0.4 4mA
0.2 2mA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2SD2215, 2SD2215A
IC — VBE
4.0
VCE=10V
3.2 25˚C
TC=100˚C –25˚C
2.4
1.6
0.8
0
0 0.4 0.8 1.2 1.6 2.0 2.4
Base to emitter voltage VBE (V)
VCE(sat) — IC
IC/IB=10
10
TC=100˚C
3
1
0.3
25˚C
–25˚C
0.1
0.03
0.01
0.01 0.03 0.1 0.3
1
Collector current IC (A)
3
10000
3000
1000
hFE — IC
VCE=10V
300
TC=100˚C
100 25˚C
–25˚C
30
10
3
1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
1000
300
100
fT — IC
VCE=10V
f=10MHz
TC=25˚C
30
10
3
1
0.3
0.1
0.001 0.003 0.01 0.03 0.1 0.3
Collector current IC (A)
1
Area of safe operation (ASO)
10
3
ICP
1 IC
0.3
Non repetitive pulse
TC=25˚C
t=1ms
10ms
DC
0.1
1000
100
10
Rth(t) — t
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
(1)
(2)
0.03
0.01 1
0.003
0.001
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
0.1
10–3
10–2
10–1
1
10 102 103 104
Time t (s)
2


Part Number 2SD2215A
Description Silicon NPN triple diffusion planar type Transistor
Maker Panasonic Semiconductor
Total Page 2 Pages
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