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Transistor
2SD2216
Silicon NPN epitaxial planer type
For general amplification Complementary to 2SB1462
1.6±0.15
Unit: mm
s Features
q q q
0.4
0.8±0.1
0.4
0.2–0.05 0.15–0.05
+0.1
High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.
1.6±0.1
1.0±0.1
0.5
1
0.5
3
2
0.45±0.1 0.3
0.75±0.
2SD2216 Datasheet
