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Power Transistors
2SD2215, 2SD2215A
Silicon NPN triple diffusion planar type
For power amplification
7.0±0.3 3.0±0.2 3.5±0.2
Unit: mm
s Features
q q
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD2215 2SD2215A 2SD2215 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
10.0 –0.
High collector to base voltage VCBO I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
7.2±0.3
0.8±0.2
1.1±0.1
1.0±0.2
+0.3
0.85±0.1 0.4±0.1
0.75±0.1
2.3±0.2 4.6±0.4
Ratings 350 400 250 300 5 1.5 0.75 15 1.3 150 –55 to +150
Unit V
1
2
3
1:Base 2:Collector 3:Emitter I Type Package
3.5±0.2 2.0±0.2
7.0±0.3
Unit: mm
0 to 0.
2SD2215A Datasheet
