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2SD2504 - Silicon NPN epitaxial planar type Transistor

Features

  • 1 : Emitter 2 : Collector 3 : Base TO-92-B1 Package.
  • Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio.
  • Collector-emitter saturation voltage.
  • Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VC.

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Datasheet preview – 2SD2504

Datasheet Details

Part number 2SD2504
Manufacturer Panasonic Semiconductor
File Size 96.21 KB
Description Silicon NPN epitaxial planar type Transistor
Datasheet download datasheet 2SD2504 Datasheet
Additional preview pages of the 2SD2504 datasheet.

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Full PDF Text Transcription

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Transistors 2SD2504 Silicon NPN epitaxial planar type For low-frequency power amplification www.DataSheet4U.com Unit: mm 5.0±0.2 4.0±0.2 0.7±0.1 0.7±0.2 12.9±0.5 • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current * Collector power dissipation Junction temperature Storage temperature Note) *: t = 380 µs Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 15 10 10 5 9 750 150 −55 to +150 Unit V V V A A mW °C °C 0.45+0.15 –0.1 2.5+0.6 –0.2 1 2 3 5.1±0.2 0.45+0.15 –0.1 2.5+0.6 –0.2 ■ Features 2.3±0.
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