900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Panasonic Electronic Components Datasheet

2SD2504 Datasheet

Silicon NPN epitaxial planar type Transistor

No Preview Available !

Transistors
2SD2504
Silicon NPN epitaxial planar type
For low-frequency power amplification
Features
Low collector-emitter saturation voltage VCE(sat)
Large collector current IC
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current *
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
15
10
10
5
9
750
150
55 to +150
Note) *: t = 380 µs
Unit
V
V
V
A
A
mW
°C
°C
www.DataSheet4U.com
5.0±0.2
Unit: mm
4.0±0.2
0.7±0.1
0.45+–00..115
2.5+–00..26
2.5+–00..26
0.45+–00..115
1 23
1 : Emitter
2 : Collector
3 : Base
TO-92-B1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio *
Collector-emitter saturation voltage *
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
VCBO
VCEO
ICBO
ICEO
IEBO
hFE1
hFE2
VCE(sat)
fT
Cob
Conditions
IC = 1 mA, IE = 0
IC = 10 µA, IB = 0
VCB = 10 V, IE = 0
VCE = 5 V, IB = 0
VEB = 5 V, IE = 0
VCE = 2 V, IC = 0.5 A
VCE = 2 V, IC = 2 A
IC = 3 A, IB = 0.1 A
VCB = 6 V, IE = −50 mA, f = 200 MHz
VCB = 20 V, IE = 0, f = 1 MHz
Min
10
10
300
195
Typ Max
0.1
1.0
0.1
800
0.28 0.50
170
45 65
Unit
V
V
µA
µA
µA
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
Publication date: February 2003
SJC00267DED
1


Panasonic Electronic Components Datasheet

2SD2504 Datasheet

Silicon NPN epitaxial planar type Transistor

No Preview Available !

2SD2504
PC Ta
800
600
400
200
0
0 40 80 120 160
Ambient temperature Ta (°C)
IC VCE
4.0 Ta = 25°C
IB = 10 mA
3.5 9 mA
8 mA
3.0
7 mA
2.5 6 mA
5 mA
2.0
4 mA
1.5 3 mA
1.0 2 mA
0.5 1 mA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
IC IB
0.5
VCE = 2 V
Ta = 25°C
0.4
0.3
0.2
0.1
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base current IB (mA)
VCE(sat) IC
10 IC / IB = 30
1
Ta = 85°C
25°C
25°C
0.1
0.01
0.001
0.1
1
Collector current IC (A)
10
1 000
Cob VCB
f = 1 MHz
Ta = 25°C
www.DaICtaShVeeBEt4U.com
1.2
VCE = 2 V
1.0
0.8
Ta = 85°C
0.6
25°C
0.4
25°C
0.2
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-emitter voltage VBE (V)
hFE IC
800
VCE = 2 V
700 Ta = 85°C
600
25°C
500
25°C
400
300
200
100
0
0.001
0.01 0.1 1 10
Collector current IC (A)
100
100
10
1 5 10 15 20 25 30
Collector-base voltage VCB (V)
2
SJC00267DED


Part Number 2SD2504
Description Silicon NPN epitaxial planar type Transistor
Maker Panasonic Semiconductor
PDF Download

2SD2504 Datasheet PDF





Similar Datasheet

1 2SD2500 Silicon NPN Transistor
Toshiba Semiconductor
2 2SD2500 SILICON POWER TRANSISTOR
SavantIC
3 2SD2500 NPN Transistor
INCHANGE
4 2SD2504 Silicon NPN epitaxial planar type Transistor
Panasonic Semiconductor
5 2SD250A Silicon NPN Power Transistors
Inchange Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy