q q q
9.9±0.3
3.0±0.5
4.6±0.2 2.9±0.2
High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 80 60 6 10 5 1 40 2.0 150.
55 to +150 Unit V V V A A A W ˚C ˚C
15.0±0.5
φ3.2±0.1
13.7±0.2 4.2±0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Ba.
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Power Transistors
2SD2528
Silicon NPN epitaxial planar type
For power amplification with high forward current transfer ratio
Unit: mm
s Features
q q q
9.9±0.3
3.0±0.5
4.6±0.2 2.9±0.2
High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 80 60 6 10 5 1 40 2.0 150 –55 to +150 Unit V V V A A A W ˚C ˚C
15.0±0.5
φ3.2±0.1
13.7±0.2 4.2±0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg
1.4±0.2 1.6±0.2 0.
2SD2528 Datasheet
