2SD2530 - Silicon NPN triple diffusion planer type Transistor
Panasonic
Key Features
High forward current transfer ratio hFE.
Allowing supply with the radial taping.
Low collector to emitter saturation voltage VCE(sat): < 2.5 V
2.5±0.1
1.2±0.1 1.48±0.2
90°
C 1.0 2.25±0.2
18.0±0.5 Solder Dip
0.65±0.1 0.65±0.1 0.35±0.1 1.05±0.1 0.55±0.1 0.55±0.1
I Absolute Maximum Ratings TC = 25°C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation TC = 25°C.
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Power Transistors
2SD2530
Silicon NPN triple diffusion planer type Darlington
Unit: mm
4.2±0.2
For power amplification
13.0±0.2
10.0±0.2 1.0±0.2
5.0±0.1
I Features
• High forward current transfer ratio hFE • Allowing supply with the radial taping • Low collector to emitter saturation voltage VCE(sat): < 2.5 V
2.5±0.1
1.2±0.1 1.48±0.2
90°
C 1.0 2.25±0.2
18.0±0.5 Solder Dip
0.65±0.1 0.65±0.1 0.35±0.1 1.05±0.1 0.55±0.1 0.55±0.1
I Absolute Maximum Ratings TC = 25°C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation TC = 25°C Ta = 25°C Tj Tstg Symbol VCBO VCEO VEBO ICP IC PC Rating 100 100 5 10 5 15 2 150 −55 to +150 °C °C Unit V V V A A W
2.5±0.2
2.5±0.
2SD2530 Datasheet