2SD2530 Description
Power Transistors 2SD2530 Silicon NPN triple diffusion planer type Darlington Unit: mm 4.2±0.2 For power amplification 13.0±0.2 10.0±0.2 1.0±0.2 5.0±0.1.
2SD2530 Key Features
- High forward current transfer ratio hFE
- Allowing supply with the radial taping
- Low collector to emitter saturation voltage VCE(sat): < 2.5 V