2SJ163
Features
- 0.05 1.9±0.2
+0.2 q Low ON-resistance q Low-noise characteristics
- 0.05
+0.1 s Absolute Maximum Ratings (Ta = 25°C)
Parameter Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol VGDS ID IG PD Tch Tstg Ratings 65
- 20
- 10 150 150
- 55 to +150 Unit
V m A m A m W °C °C
+0.2 1.1
- 0.1
1: Source 2: Drain 3: Gate
JEDEC: TO-236 EIAJ: SC-59 Mini Type Package (3-pin)
Marking Symbol (Example): 4M s Electrical Characteristics (Ta = 25°C)
Parameter Drain to Source cut-off current Gate to Source leakage current Gate to Drain voltage Gate to Source cut-off voltage Forward transfer admittance Drain to Source ON-resistance Symbol IDSS- IGSS VGDS VGSC | Yfs | RDS(on) Conditions VDS =
- 10V, VGS = 0 VGS = 30V, VDS = 0 IG = 10µA, VDS = 0 VDS =
- 10V, ID =
- 10µA VDS =
- 10V, ID =
- 1m A, f = 1k Hz VDS =
- 10m V, VGS = 0 VDS =
- 10V, VGS = 0, f = 1MHz 1.8 65 1.5 2.5 300 12 4 3.5 min
- 0.2 typ...
