0.05
+0.1
s Absolute Maximum Ratings (Ta = 25°C)
Parameter Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol VGDS ID IG PD Tch Tstg Ratings 65.
20.
10 150 150.
55 to +150 Unit
0.8
2
1.45
V mA mA mW °C °C
+0.2 1.1.
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Silicon Junction FETs (Small Signal)
2SJ163
Silicon P-Channel Junction FET
For general switching Complementary to 2SK1103
0.65±0.15
+0.2
unit: mm
0.65±0.15
2.8 –0.3
1.5 –0.05
+0.25
s Features
2.9 –0.05 1.9±0.2
+0.2
q Low ON-resistance q Low-noise characteristics
0.95
1
0.95
3
0.4 –0.05
+0.1
s Absolute Maximum Ratings (Ta = 25°C)
Parameter Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol VGDS ID IG PD Tch Tstg Ratings 65 −20 −10 150 150 −55 to +150 Unit
0.8
2
1.45
V mA mA mW °C °C
+0.2 1.1 –0.
2SJ163 Datasheet
