* 2.9
* 0.05 1.9±0.2 +0.2 q Low ON-resistance q Low-noise characteristics 0.95 1 0.95 3 0.4
* 0.05 +0.1 s Absolute Maximum Ratings (Ta = 25°C) Parameter Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol VGDS
2SJ163
Panasonic Semiconductor
31.76 KB
P-channel mosfet.
Silicon Junction FETs (Small Signal) 2SJ163 Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 0.65±0.15 +0.2 unit: mm 0..
📁 Related Datasheet
2SJ160 P-Channel MOSFET (Hitachi Semiconductor)
2SJ160 Silicon P-Channel MOSFET (Renesas)
2SJ161 P-Channel MOSFET (Hitachi Semiconductor)
2SJ161 Silicon P-Channel MOSFET (Renesas)
2SJ162 P-Channel MOSFET (Hitachi Semiconductor)
2SJ162 Silicon P-Channel MOSFET (Renesas)
2SJ164 P-Channel MOSFET (Panasonic Semiconductor)
2SJ165 P-Channel MOSFET (NEC)
2SJ166 P-Channel MOSFET (NEC)
2SJ167 P-Channel MOSFET (Toshiba Semiconductor)
