* q Low gate to source leakage current, IGSS q Small capacitance of Ciss, Coss, Crss q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 0.95 2.9
* 0.05 1 1.9±0.2 +0.2 0.95 3 0.4
* 0.05 +0.1 2 Gate to Drain voltage Gate t
2SK1842
Panasonic Semiconductor
32.19 KB
Silicon n-channel junction fet.
Silicon Junction FETs (Small Signal) 2SK1842 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor 0.65±0.15 +.
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