Datasheet Summary
Power F-MOS FETs
Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown
4.5 unit: mm
15.5±0.5
φ3.2±0.1
3.0±0.3
5˚
26.5±0.5
5˚
23.4 22.0±0.5 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
2.0 1.2
5˚
18.6±0.5
5˚ 5˚
4.0 2.0±0.2 1.1±0.1
0.7±0.1
3.3±0.3 0.7±0.1
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse
Symbol VDSS VGSS ID IDP EAS- PD Tch Tstg
Ratings 450 ±30 ±13 ±26 200 100 3 150
- 55 to +150
Unit V V A A mJ W °C...
