* q Low noise-figure (NF) q High gate to drain voltage VGDO q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 0.95 2.9
* 0.05 1 1.9±0.2 +0.2 0.95 3 0.4
* 0.05 +0.1 2 1.45 +0.2 1.1
* 0.1 Parameter Gate to Drain
2SK2751
Panasonic Semiconductor
30.93 KB
Silicon n-channel junction fet.
Silicon Junction FETs (Small Signal) 2SK2751 Silicon N-Channel Junction FET For impedance conversion in low frequency For pyroelectric sensor 0.65±0..
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