B1011
B1011 is 2SB1011 manufactured by Panasonic.
Features
- High collector-base voltage (Emitter open) VCBO
- High collector-emitter voltage (Base open) VCEO
- Large collector power dissipation PC
- Low collector-emitter saturation voltage VCE(sat)
φ 3.16±0.1
3.8±0.3
11.0±0.5
1.9±0.1
- Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating
- 400
- 400
- 5
- 100
- 200 1.2 150
- 55 to +150 Unit V V V
1 2 3 0.75±0.1 4.6±0.2
0.5±0.1 0.5±0.1 2.3±0.2 1.76±0.1 m A m A W °C °C
- Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emiter open) Collector-emitter voltage (Base open) Emiter-base voltage (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (mon base, input open circuited) Symbol VCBO VCEO VEBO h FE VCE(sat) VBE(sat) f T Cob Conditions IC =
- 100 µA, IE = 0 IC =
- 500 µA, IB = 0 IE =
- 100 µA, IC = 0 VCE =
- 5 V, IC =
- 30 m A IC =
- 50 m A, IB =
- 5 m A IC =
- 50 m A, IB =
- 5 m A VCB =
- 30 V, IE = 20 m A, f = 200 MHz VCB =
- 30 V, IE = 0, f = 1 MHz 70 9 Min
- 400
- 400
- 5 30
- 2.5
- 1.5 Typ Max Unit V V V V V MHz p F
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
16.0±1.0
1: Emitter 2: Collector 3: Base TO-126B-A1...
