Datasheet4U Logo Datasheet4U.com

C5121 - 2SC5121

Key Features

  • φ 3.16±0.1 3.8±0.3 11.0±0.5.
  • High collector-base voltage (Emitter open) VCBO 3.05±0.1.
  • High collector-emitter voltage (Base open) VCEO.
  • Small collector output capacitance (Common base, input open circuited) Cob.
  • TO-126B package which requires no insulation plate for installation to the heat sink 1.9±0.1 16.0±1.0 /.
  • Absolute Maximum Ratings Ta = 25°C e ) Parameter Symbol Rating Unit c type Collector-base voltage (Emitter open) VCBO 400 V n.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
C5122 CB Transceiver PLL Nippon Precision Circuits
C5122 2SC5122 Toshiba
C5124 2SC5124 Sanken electric
C5125 2SC5125 Mitsubishi Electric Semiconductor
C5127 2SC5127 Panasonic

Other Datasheets by Panasonic

Part Number Description
C5128 2SC5128

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Power Transistors 2SC5121 Silicon NPN triple diffusion planar type For general amplification 8.0+–00..15 Unit: mm 3.2±0.2 ■ Features φ 3.16±0.1 3.8±0.3 11.0±0.5 • High collector-base voltage (Emitter open) VCBO 3.05±0.1 • High collector-emitter voltage (Base open) VCEO • Small collector output capacitance (Common base, input open circuited) Cob • TO-126B package which requires no insulation plate for installation to the heat sink 1.9±0.1 16.0±1.0 / ■ Absolute Maximum Ratings Ta = 25°C e ) Parameter Symbol Rating Unit c type Collector-base voltage (Emitter open) VCBO 400 V n d tage.