φ3.2±0.1 5°
26.5±0.5
3.0±0.3 5°
23.4 22.0±0.5
2.0 1.2
5°
18.6±0.5
5° 5°
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to base voltage 2SC5270 2SC5270A 2SC5270 2SC5270A Symbol VCBO VCES VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg
4.0 2.0±0.2 1.1±0.1
2.0
0.7±0.1
5.45±0.3
3.3±0.3 0.7±0.1
5.45±0.3
5.5±0.3
V
5°
V
1 2 3
2.0
Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation.
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C5270. For precise diagrams, and layout, please refer to the original PDF.
Power Transistors 2SC5270, 2SC5270A Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 4.5 Unit: mm q q q High breakdown voltage, and high r...
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output 15.5±0.5 4.5 Unit: mm q q q High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC=25˚C) Ratings 1500 1600 1500 1600 600 5 20 12 8 120 3 150 –55 to +150 Unit 10.0 s Features φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 5° 18.6±0.5 5° 5° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to base voltage 2SC5270 2SC5270A 2SC5270 2SC5270A Symbol VCBO VCES VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg 4.0 2.0±0.2 1.1±0.1 2.0 0.7±0.1 5.45±0.3 3.3±0.3 0.7±0.1 5.45±0.3 5.5±0.3 V 5° V 1 2 3 2.
C5270 Datasheet
