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C5294 - 2SC5294

Features

  • φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 www. DataSheet4U. com 5° 18.6±0.5 5° 5° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to base voltage 2SC5294 2SC5294A 2SC5294 2SC5294A Symbol VCBO VCES VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg 4.0 2.0±0.2 1.1±0.1 2.0 0.7±0.1 5.45±0.3 3.3±0.3 0.7±0.1 5.45±0.3 5.5±0.3 V 5° V 1 2 3 2.0 Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power.

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Full PDF Text Transcription

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Power Transistors 2SC5294, 2SC5294A Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 4.5 Unit: mm q q q High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (Ta=25˚C) Ratings 1500 1600 1500 1600 600 5 30 20 10 120 3.5 150 –55 to +150 Unit 10.0 s Features φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 www.DataSheet4U.com 5° 18.6±0.5 5° 5° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to base voltage 2SC5294 2SC5294A 2SC5294 2SC5294A Symbol VCBO VCES VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg 4.0 2.0±0.2 1.1±0.1 2.0 0.7±0.1 5.45±0.3 3.3±0.3 0.7±0.1 5.45±0.3 5.5±0.3 V 5° V 1 2 3 2.
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