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D1263A - 2SD1263A

Overview

Power Transistors 2SD1263, 2SD1263A Silicon NPN triple diffusion planar type For power amplification Unit: mm s q.

Key Features

  • High collector to base voltage VCBO Full-pack package which can be installed to the heat sink with one screw 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 4.2±0.2 s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 350 400 250 300 5 1.5 0.75 35 2 150.
  • 55 to +150 Unit V 2SD1263 2SD1263A 2SD1263 14.0±0.5 base voltage Collector to Solder Dip 4.0 Collector to 16.7±0.3 7.5±0.2 1.3±0.2 emitter voltage 2SD1263A Emitter to base.