0.05
+0.1
Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. Allowing supply with the radial taping. (Ta=25˚C)
Ratings 25 20 12 1 0.5 600 150.
55 ~ +150 Unit V V V A A mW ˚C ˚C
0.45.
0.05 2.5±0.5 1 2 2.5±0.5 3
+0.1
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation J.
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Transistor
2SD1996
Silicon NPN epitaxial planer type
For low-voltage output amplification For muting For DC-DC converter
Unit: mm
6.9±0.1
0.15
0.7
4.0
1.05 2.5±0.1 ±0.05 (1.45) 0.8
s Features
q q q q
0.65 max.
14.5±0.5 0.45–0.05
+0.1
Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. Allowing supply with the radial taping. (Ta=25˚C)
Ratings 25 20 12 1 0.5 600 150 –55 ~ +150 Unit V V V A A mW ˚C ˚C
0.45–0.05 2.5±0.5 1 2 2.5±0.5 3
+0.
D1996 Datasheet
