* q q q 6.0 1.5 1.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC
D2250
Panasonic Semiconductor
60.02 KB
2sd2250.
Power Transistors 2SD2250 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1490 φ 3.3±0.2 5.0±0.3 3.0 .
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