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D2573 Datasheet 2SD2573

Manufacturer: Panasonic

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Overview

Power Transistors 2SD2573 www.DataSheet4U.com Silicon NPN triple diffusion planar type For high current amplification, power amplification 7.5±0.2 Unit: mm 4.5±0.2 16.0±1.0 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation TC = 25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 80 60 6 3 6 1.5 150 −55 to +150 Unit V V V A A W °C °C 2.5±0.1 • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping 10.8±0.2 0.65±0.1 0.85±0.1 1.0±0.1 0.

Key Features

  • .8 C 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 0.5±0.1 0.8 C 1 2 3 2.05±0.2 0.4±0.1 2.5±0.2 2.5±0.2 1: Emitter 2: Collector 3: Base MT-3-A1 Package.
  • Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio.
  • Collector-emitter saturation voltage Transition frequency Symbol VCEO ICBO ICEO IEBO.

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