Low collector to emitter saturation voltage VCE(sat): < 2.5 V
2.5±0.1
1.2±0.1 1.48±0.2
90°
C 1.0 2.25±0.2
18.0±0.5 Solder Dip
0.65±0.1 0.65±0.1 0.35±0.1 1.05±0.1 0.55±0.1 0.55±0.1
I Absolute Maximum Ratings TC = 25°C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation TC = 25°C.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Power Transistors
2SD2530
Silicon NPN triple diffusion planer type Darlington
Unit: mm
4.2±0.2
For power amplification
13.0±0.2
10.0±0.2 1.0±0.2
5.0±0.1
I Features
• High forward current transfer ratio hFE • Allowing supply with the radial taping • Low collector to emitter saturation voltage VCE(sat): < 2.5 V
2.5±0.1
1.2±0.1 1.48±0.2
90°
C 1.0 2.25±0.2
18.0±0.5 Solder Dip
0.65±0.1 0.65±0.1 0.35±0.1 1.05±0.1 0.55±0.1 0.55±0.1
I Absolute Maximum Ratings TC = 25°C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation TC = 25°C Ta = 25°C Tj Tstg Symbol VCBO VCEO VEBO ICP IC PC Rating 100 100 5 10 5 15 2 150 −55 to +150 °C °C Unit V V V A A W
2.5±0.2
2.5±0.
D2530 Datasheet