Overview: Power Transistors 2SD2573
.. Silicon NPN triple diffusion planar type For high current amplification, power amplification
7.5±0.2 Unit: mm
4.5±0.2 16.0±1.0 ■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation TC = 25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 80 60 6 3 6 1.5 150 −55 to +150 Unit V V V A A W °C °C 2.5±0.1 • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping 10.8±0.2 0.65±0.1 0.85±0.1 1.0±0.1 0.
