q High foward current transfer ratio hFE q Satisfactory linearity of foward current transfer ratio hFE q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO VCEO VEBO ICP IC IB
PC
80 60 6 8 4 1 40 2.0
Junction temperatu.
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Power Transistors
2SD2527
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
Unit: mm
s Features
q High foward current transfer ratio hFE q Satisfactory linearity of foward current transfer ratio hFE q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO VCEO VEBO ICP IC IB
PC
80 60 6 8 4 1 40 2.0
Junction temperature Storage temperature
Tj 150 Tstg –55 to +150
Unit V V V A A A
W
˚C ˚C
13.7±0.2 4.2±0.2
15.0±0.5
9.9±0.3
4.6±0.2 2.9±0.2
3.0±0.5
φ3.2±0.
D2527 Datasheet
