LNA2903L
Features
High-power output, high-efficiency : Ie = 9 m W/sr (min.) Emitted light spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current Wide directivity : θ = 20 deg. (typ.) Transparent epoxy resin package
13.5±1.0 11.5±1.0 3.6±0.3 1.0 7.65±0.2
ø5.0±0.2
2-1.0±0.15 2-0.6±0.15
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature
- ø6.0±0.2
Symbol PD IF IFP- VR Topr Tstg
Ratings 160 100 1.5 3
- 25 to +85
- 40 to+100
Unit m W m A A V ˚C ˚C
1 1: Cathode 2: Anode f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Radiant intensity at center Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Half-power angle Symbol Ie λP ∆λ VF IR Ct θ Conditions IF = 50m A IF = 50m A IF = 50m A IF = 100m A VR = 3V VR...
