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LNA2904L - GaAs Infrared Light Emitting Diode

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Features

  • High-power output, high-efficiency : Ie = 10 mW/sr (min. ) Emitted light spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current High center radiant intensity Transparent epoxy resin package 13.5±1.0 11.5±1.0 3.9±0.3 1.0 7.65±0.2 ø5.0±0.2 Not soldered 2-1.0±0.15 2-0.6±0.15 2.54 0.6±0.15 2 1 1: Cathode 2: Anode ø6.0±0.2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (.

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Datasheet Details

Part number LNA2904L
Manufacturer Panasonic Semiconductor
File Size 40.35 KB
Description GaAs Infrared Light Emitting Diode
Datasheet download datasheet LNA2904L Datasheet
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Infrared Light Emitting Diodes LNA2904L GaAs Infrared Light Emitting Diode Unit : mm For optical control systems Features High-power output, high-efficiency : Ie = 10 mW/sr (min.) Emitted light spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current High center radiant intensity Transparent epoxy resin package 13.5±1.0 11.5±1.0 3.9±0.3 1.0 7.65±0.2 ø5.0±0.2 Not soldered 2-1.0±0.15 2-0.6±0.15 2.54 0.6±0.15 2 1 1: Cathode 2: Anode ø6.0±0.2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP* VR Topr Tstg Ratings 160 100 1.
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