LNA2903L - GaAs Infrared Light Emitting Diode

Product Overview

Panasonic Semiconductor

Part number	LNA2903L
Manufacturer	Panasonic Semiconductor
File Size	51.46 KB
Description	GaAs Infrared Light Emitting Diode
Datasheet	LNA2903L Datasheet
Additional preview pages of the LNA2903L datasheet.

High-power output, high-efficiency : Ie = 9 mW/sr (min. ) Emitted light spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current Wide directivity : θ = 20 deg. (typ. ) Transparent epoxy resin package 13.5±1.0 11.5±1.0 3.6±0.3 1.0 7.65±0.2 ø5.0±0.2 1.0 2-1.0±0.15 2-0.6±0.15 2.54 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage.

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Published: Mar 22, 2005 |