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LNA2903L - GaAs Infrared Light Emitting Diode

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Features

  • High-power output, high-efficiency : Ie = 9 mW/sr (min. ) Emitted light spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current Wide directivity : θ = 20 deg. (typ. ) Transparent epoxy resin package 13.5±1.0 11.5±1.0 3.6±0.3 1.0 7.65±0.2 ø5.0±0.2 1.0 2-1.0±0.15 2-0.6±0.15 2.54 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage.

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Datasheet Details

Part number LNA2903L
Manufacturer Panasonic Semiconductor
File Size 51.46 KB
Description GaAs Infrared Light Emitting Diode
Datasheet download datasheet LNA2903L Datasheet
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Infrared Light Emitting Diodes LNA2903L GaAs Infrared Light Emitting Diode Unit : mm For optical control systems Features High-power output, high-efficiency : Ie = 9 mW/sr (min.) Emitted light spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current Wide directivity : θ = 20 deg. (typ.) Transparent epoxy resin package 13.5±1.0 11.5±1.0 3.6±0.3 1.0 7.65±0.2 ø5.0±0.2 1.0 2-1.0±0.15 2-0.6±0.15 2.54 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * ø6.0±0.2 Symbol PD IF IFP* VR Topr Tstg Ratings 160 100 1.
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