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MA26077 - Band Switching Diodes

Features

  • s 0.60±0.05 Unit: mm.
  • Low forward dynamic resistance rf.
  • Less voltage dependence of diode capacitance CD 3 2.
  • Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Forward current Operating ambient temperature Storage temperature Symbol VR IF Topr Tstg Rating 35 100.
  • 25 ∼ +85.
  • 55 to +125 Unit V mA °C °C 1 1.00±0.05 0.39+0.01.
  • 0.03 0.15±0.05 0.05±0.03 0.35±0.01 0.25±0.05 0.50±0.05 0.25±0.05 1 3 0.65±0.01 2 0.05±0.03 1: Anode 2: N.

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Full PDF Text Transcription

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www.DataSheet4U.com Band Switching Diodes MA26077 Silicon epitaxial planar type For band switching  Features 0.60±0.05 Unit: mm  Low forward dynamic resistance rf  Less voltage dependence of diode capacitance CD 3 2  Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Forward current Operating ambient temperature Storage temperature Symbol VR IF Topr Tstg Rating 35 100 –25 ∼ +85 –55 to +125 Unit V mA °C °C 1 1.00±0.05 0.39+0.01 −0.03 0.15±0.05 0.05±0.03 0.35±0.01 0.25±0.05 0.50±0.05 0.25±0.05 1 3 0.65±0.01 2 0.05±0.03 1: Anode 2: N.C. 3: Cathode ML3-N2 Package Marking Symbol: 3L  Electrical Characteristics Ta = 25°C±3°C Parameter Forward voltage Reverse current Diode capacitance Forward dynamic resistance * Note) 1. 2. 3. 4.
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