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MA26111 - Switching Diodes

Features

  • s.
  • Allowing high-density mounting.
  • Short reverse recovery time trr.
  • Small terminal capacitance Ct.
  • High breakdown voltage: VR = 80 V 0.01±0.005 0.60±0.05 Unit: mm 2 1 1.00±0.05 0.39+0.01.
  • 0.03 0.05±0.03 0.05±0.03.
  • Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Maximum peak reverse voltage Forward current Peak forward current Non-repetitive peak forward surge current.
  • Junction temperature Storage temperature Note).
  • : t.

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Full PDF Text Transcription

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www.DataSheet4U.com Switching Diodes MA26111 Silicon epitaxial planar type For switching circuits  Features  Allowing high-density mounting  Short reverse recovery time trr  Small terminal capacitance Ct  High breakdown voltage: VR = 80 V 0.01±0.005 0.60±0.05 Unit: mm 2 1 1.00±0.05 0.39+0.01 −0.03 0.05±0.03 0.05±0.03  Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Maximum peak reverse voltage Forward current Peak forward current Non-repetitive peak forward surge current * Junction temperature Storage temperature Note) * : t = 1 s Symbol VR VRM IF IFM IFSM Tj Tstg Rating 80 80 100 225 500 125 –55 to +125 Unit V V mA mA mA °C °C 1: Anode 2: Cathode 0.50±0.05 2 0.25±0.05 0.25±0.05 1 0.65±0.
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