MIP501 ic equivalent, silicon mos ic.
q
MIP501
3.8±0.2 10.8±0.2
7.5±0.2
4.5±0.2
Unit : mm
High breakdown voltage, N-Ch MOS FET output (V DSS > 40V Ron < 0.5 Ω) Over-current-protection function built-in R.
q
Lamp drive
2.5±0.2 0.8C
0.5±0.1 2.5±0.2
0.4±0.1 2.05±0.2
s Absolute Maximum Ratings (Ta= 25˚C)
Parameter Output br.
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