OH10009 device equivalent, gaas hall device.
* Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T)
* Input resistance: typ. 0.75 kΩ
* Satisfactory linearity of GaAs hall voltage with respect to the magnetic .
1.1 − 0.1
0.16 − 0.06
+ 0.2
+ 0.1
0.4 − 0.05
+ 0.1
1
OH10009
PD T a
200 180 240 B = 1 kG IC = 6 mA 200
GaAs H.
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