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XN01114 Datasheet Silicon PNP epitaxial planer transistor

Manufacturer: Panasonic

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Datasheet Details

Part number XN01114
Manufacturer Panasonic
File Size 162.68 KB
Description Silicon PNP epitaxial planer transistor
Datasheet download datasheet XN01114 Datasheet

Overview

www.DataSheet4U.com Composite Transistors XN1114 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package.

(Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.

1.9±0.1 +0.2 4 0.95 3 2 0.3 -0.05 0.4±0.2 0.16 -0.06 +0.1 1.1 -0.1 q UN1114 × 2 elements 0.8 s Basic Part Number of Element +0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings –50 –50 –100 300 150 –55 to +150 Unit V V mA mW ˚C ˚C 1 : Collector (Tr1) 2 : Collector (Tr2) 3 : Base (Tr2) 0 to 0.1 0.1 to 0.3 4 : Emitter 5 : Base (Tr1) EIAJ : SC–74A Mini Type Pakage (5–pin) Marking Symbol: 7Q Internal Connection 5 4 3 2 Tr1 1 Tr2 s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance Resistance ratio *1 (Ta=25˚C) Symbol VCBO VCEO ICBO ICEO IEBO hFE hFE (small/large)*1 VCE(sat) VOH VOL fT R1 R1/R2 Conditions IC = –10µA, IE = 0 IC = –2mA, IB = 0 VCB = –50V, IE = 0 VCE = –50V, IB = 0 VEB = –6V, IC = 0 VCE = –10V, IC = –5mA VCE = –10V, IC = –5mA IC = –10mA, IB = – 0.3mA VCC = –5V, VB = – 0.5V, RL = 1kΩ VCC = –5V, VB = –2.5V, RL = 1kΩ VCB = –10V, IE = 1mA, f = 200MHz –30% 0.17 80 10 0.21 +30% 0.25 –4.9 – 0.2 80 0.5 0.99 – 0.25 V V V MHz kΩ min –50 –50 – 0.1 – 0.5 – 0.2 typ max Unit V V µA µA mA Ratio between 2 elements +0.1 1.45±0.

Key Features

  • 1 DataSheet 4 U . com www. DataSheet4U. com Composite Transistors PT.
  • Ta 500 XN1114 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC.
  • VCE.
  • 160.
  • 100 VCE(sat).
  • IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 400 hFE.
  • IC VCE=.
  • 10V IB=.
  • 1.0mA.
  • 30.
  • 10.
  • 3.
  • 1.
  • 0.3.
  • 0.1.
  • 0.03.
  • 25˚C.

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