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Panasonic Electronic Components Datasheet

XN4316 Datasheet

Silicon NPN(PNP) epitaxial planer transistor

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Composite Transistors
XN4316
Silicon NPN epitaxial planer transistor (Tr1)
Silicon PNP epitaxial planer transistor (Tr2)
For switching/digital circuits
s Features
q Two elements incorporated into one package.
(Transistors with built-in resistor)
q Reduction of the mounting area and assembly cost by one half.
0.65±0.15
6
5
4
2.8
+0.2
–0.3
+0.25
1.5 –0.05
Unit: mm
0.65±0.15
1
2
3
s Basic Part Number of Element
q UN1216+UN1116
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Tr1 Collector to emitter voltage
Collector current
Collector to base voltage
Tr2 Collector to emitter voltage
Collector current
Total power dissipation
Overall Junction temperature
Storage temperature
VCBO
VCEO
IC
VCBO
VCEO
IC
PT
Tj
Tstg
50
50
100
–50
–50
–100
300
150
–55 to +150
Unit
V
V
mA
V
V
mA
mW
˚C
˚C
0.1 to 0.3
0.4±0.2
1 : Collector (Tr1)
2 : Base (Tr2)
3 : Emitter (Tr2)
4 : Collector (Tr2)
5 : Base (Tr1)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol: 7U
Internal Connection
Tr1
6
1
52
43
Tr2
1


Panasonic Electronic Components Datasheet

XN4316 Datasheet

Silicon NPN(PNP) epitaxial planer transistor

No Preview Available !

Composite Transistors
s Electrical Characteristics (Ta=25˚C)
q Tr1
Parameter
Symbol
Collector to base voltage
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Transition frequency
Input resistance
VCBO
VCEO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VOH
VOL
fT
R1
Conditions
IC = 10µA, IE = 0
IC = 2mA, IB = 0
VCB = 50V, IE = 0
VCE = 50V, IB = 0
VEB = 6V, IC = 0
VCE = 10V, IC = 5mA
IC = 10mA, IB = 0.3mA
VCC = 5V, VB = 0.5V, RL = 1k
VCC = 5V, VB = 2.5V, RL = 1k
VCB = 10V, IE = –2mA, f = 200MHz
min
50
50
160
4.9
–30%
XN4316
typ max Unit
V
V
0.1 µA
0.5 µA
0.01 mA
460
0.25 V
V
0.2 V
150 MHz
4.7 +30% k
q Tr2
Parameter
Symbol
Collector to base voltage
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Transition frequency
Input resistance
VCBO
VCEO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VOH
VOL
fT
R1
Conditions
IC = –10µA, IE = 0
IC = –2mA, IB = 0
VCB = –50V, IE = 0
VCE = –50V, IB = 0
VEB = –6V, IC = 0
VCE = –10V, IC = –5mA
IC = –10mA, IB = – 0.3mA
VCC = –5V, VB = – 0.5V, RL = 1k
VCC = –5V, VB = –2.5V, RL = 1k
VCB = –10V, IE = 1mA, f = 200MHz
min
–50
–50
160
–4.9
–30%
typ max Unit
V
V
– 0.1 µA
– 0.5 µA
– 0.01 mA
460
– 0.25 V
V
– 0.2
V
80 MHz
4.7 +30% k
2


Part Number XN4316
Description Silicon NPN(PNP) epitaxial planer transistor
Maker Panasonic Semiconductor
Total Page 4 Pages
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