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C30921E - (C309xxx) Silicon Avalanche Photodiodes

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PerkinElmer Optoelectronics

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C30921E (C309xxx) Silicon Avalanche Photodiodes by PerkinElmer Optoelectronics - Datasheet Preview — Datasheet preview – C30921E

Datasheet Details

Part number	C30921E
Manufacturer	PerkinElmer Optoelectronics
File Size	232.32 KB
Description	(C309xxx) Silicon Avalanche Photodiodes
Datasheet	C30921E Datasheet
Note	This datasheet PDF includes multiple part numbers: C30921E, C30902E. Please refer to the document for exact specifications by model.
Additional preview pages of the C30921E datasheet.

Product details

Description

PerkinElmer Type C30902E avalanche photodiode utilizes a silicon detector chip fabricated with a double-diffused "reachthrough" structure.

Features

High Quantum Efficiency 77% Typical at 830 nm.
C30902S and C30921S in Geiger Mode: Single-Photon Detection Probability to 50% Low Dark-Count Rate at 5% Detection Probability - Typically 15,000/second at +22°C 350/second at -25°C Count Rates to 2 x 106/second.
Hermetically Sealed Package.
Low Noise at Room Temperature C30902E, C30921E - 2.3 x 10-13 A/Hz1/2 C30902S, C30921S - 1.1 x 10-13 A/Hz1/2.
High Responsivity - Internal Avalanche Gains in Excess o.

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Other Datasheets by PerkinElmer Optoelectronics

C30921EH - Silicon Avalanche Photodiodes
C30921S - (C309xxx) Silicon Avalanche Photodiodes
C30921SH - Silicon Avalanche Photodiodes
C3092SH-DTC - Silicon Avalanche Photodiodes
C3092SH-TC - Silicon Avalanche Photodiodes
C30902 - Silicon Avalanche Photodiodes

Published: Jan 22, 2006 |