* High Quantum Efficiency 77% Typical at 830 nm
* C30902S and C30921S in Geiger Mode: Single-Photon Detection Probability to 50% Low Dark-Count Rate at 5% Detecti.

requiring high speed and/or high responsivity. Silicon Avalanche Photodiodes C30902E, C30902S, C30921E, C30921S High Sp.

PerkinElmer Type C30902E avalanche photodiode utilizes a silicon detector chip fabricated with a double-diffused "reachthrough" structure. This structure provides high responsivity between 400 and 1000 nm as well as extremely fast rise and fall times.

C30921

C30921EH

C30921S

C30921SH

C30927E

C3092SH-DTC

C3092SH-TC

C3090

C30902

C30902BH

C30902E

C30902EH

C30902EH-2