* multi-base structure and emitter-ballasting resistors for an optimum temperature profile.
* gold metallization ensures excellent reliability.
* the device can be applied at a PL of max. 1,5 W when it is mounted on a printed wiring board (see Fig.6) without an external heats
BLU11
Philips
66.35 KB
Uhf power transistor.
DISCRETE SEMICONDUCTORS DATA SHEET BLU11/SL UHF power transistor Product speciļ¬cation July 1986 http://www.Datasheet4U.com Philips Semiconductors .
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