BLU11SL Datasheet | Philips Semiconductors

DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in mobile transmitters in the 470 MHz band. FEATURES - multi-base structure and emitter-ballasting resistors for an optimum temperature profile. - gold metallization ensures excellent reliability. - the device can be applied at a PL of max. 1,5 W when it is mounted on a printed wiring board (see Fig.6) without an external heatsink. The transistor has a 4-lead envelope with a ceramic cap (SOT-122D). All leads are isolated from the mounting base. QUICK REFERENCE DATA R.F. performance in a mon-emitter class-B circuit. MODE OF OPERATION narrow band; c.w. T °C Tmb = 25 Ta = Note 1. Device mounted on a printed wiring board (see Fig.6). PIN CONFIGURATION 25(1) VCE V 12,5 12,5 f MHz 470 470 PL W 2,5 1,5 Gp d B > 10 > 12 BLU11/SL ηC % > 55 > 55 PINNING - SOT122D. PIN 1 DESCRIPTION collector emitter base emitter handbook, halfpage 2 3 4 MSB055 Fig.1 Simplified outline. SOT122D. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the Be O disc is not damaged. July 1986 2 http://.. Philips Semiconductors Product specification UHF power transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current d.c. or average (peak value), f > 1 MHz Total power dissipation at Tmb ≤ 90 °C; f > 1 MHz Storage temperature Operating junction temperature Ptot(rf) Tstg Tj max. max. IC; IC(AV) ICM max. max. VCBO VCEO VEBO max. max. max. BLU11/SL 36 V 16 V 3 V 0,4 A 1,2 A 6 W 200 °C - 65 to +150 °C handbook, halfpage MDA306 Ptot(rf) (W) II 8 0 0 I Continuous r.f. operation (f > 1 MHz) II Short-time r.f. operation during mismatch (f > 1 MHz) 40 80 120 160 Tmb (°C) Fig.2 Power/temperature derating curves. THERMAL RESISTANCE Dissipation = 4,5 W...