Description
N-P-N silicon planar epitaxial transistor primarily intended for use in mobile transmitters in the 470 MHz band.
Features
- multi-base structure and emitter-ballasting resistors for an optimum temperature profile.
- gold metallization ensures excellent reliability.
- the device can be applied at a PL of max. 1,5 W when it is mounted on a printed wiring board (see Fig.6) without an external heatsink. The transistor has a 4-lead envelope with a ceramic cap (SOT-122D). All leads are isolated from the mounting base. QUICK.
BLU11 Datasheet
