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BLU11 - UHF power transistor

General Description

N-P-N silicon planar epitaxial transistor primarily intended for use in mobile transmitters in the 470 MHz band.

Key Features

  • multi-base structure and emitter-ballasting resistors for an optimum temperature profile.
  • gold metallization ensures excellent reliability.
  • the device can be applied at a PL of max. 1,5 W when it is mounted on a printed wiring board (see Fig.6) without an external heatsink. The transistor has a 4-lead envelope with a ceramic cap (SOT-122D). All leads are isolated from the mounting base. QUICK.

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Other Datasheets by Philips Semiconductors (now NXP Semiconductors)

Part Number Description
BLU11SL UHF power transistor
BLU20 UHF power transistor
BLU20-12 UHF power transistor
BLU30 UHF power transistor
BLU30-12 UHF power transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BLU11/SL UHF power transistor Product specification July 1986 http://www.Datasheet4U.com Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in mobile transmitters in the 470 MHz band. FEATURES • multi-base structure and emitter-ballasting resistors for an optimum temperature profile. • gold metallization ensures excellent reliability. • the device can be applied at a PL of max. 1,5 W when it is mounted on a printed wiring board (see Fig.6) without an external heatsink. The transistor has a 4-lead envelope with a ceramic cap (SOT-122D). All leads are isolated from the mounting base. QUICK REFERENCE DATA R.F. performance in a common-emitter class-B circuit.