Description
N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 470 MHz communications band.
Features
- multi-base structure and emitter-ballasting resistors for an optimum temperature profile.
- gold metallization ensures excellent reliability.
- internal matching to achieve an optimum wideband capability and high power gain
BLU30/12
The transistor has a 6-lead flange envelope with a ceramic cap (SOT-119). All leads are isolated from the flange. QUICK.