MX0912B251Y transistors equivalent, npn microwave power transistors.
* Interdigitated structure; high emitter efficiency
* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
*.
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MX0912B251Y
PINNING - SOT439A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION
olumns
c b
Intended .
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