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PMBF4392 - N-channel FETs

General Description

Symmetrical silicon n-channel depletion type junction field-effect transistors on a plastic microminiature envelope intended for application in thick and thin-film circuits.

The transistors are intended for low-power chopper or switching applications in industry.

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Other Datasheets by Philips Semiconductors (now NXP Semiconductors)

Part Number Description
PMBF4391 N-channel FETs
PMBF4393 N-channel FETs
PMBF4416 N-channel field-effect transistor
PMBF4416A N-channel field-effect transistor
PMBF107 N-channel enhancement mode vertical D-MOS transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET PMBF4391; PMBF4392; PMBF4393 N-channel FETs Product speciļ¬cation File under Discrete Semiconductors, SC07 April 1995 Philips Semiconductors Product speciļ¬cation N-channel FETs DESCRIPTION Symmetrical silicon n-channel depletion type junction field-effect transistors on a plastic microminiature envelope intended for application in thick and thin-film circuits. The transistors are intended for low-power chopper or switching applications in industry. PINNING 1 2 3 = drain = source = gate PMBF4391; PMBF4392; PMBF4393 handbook, halfpage 3 d s g 1 Top view 2 MAM385 Note 1. Drain and source are interchangeable. Marking code PMBF4391 = p6J PMBF4392 = p6K PMBF4393 = p6G Fig.1 Simplified outline and symbol, SOT23.