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PMBF4392

PMBF4392 Philips N-channel FETs

Title JFET N채널 40V 250mW 표면 실장 SOT-23(TO-236AB)
Description Symmetrical silicon n-channel depletion type junction field-effect transistors on a plastic microminiature envelope intended for application in thick and thin-film circuits. The transistors are intended for low-power chopper or switching applications in industry. PINNING 1 2 3 = drain = source = gate PMBF4391; PMBF4392; PMBF4393 handbook, halfpage 3 d s g 1 Top view 2 MAM385 Note 1. Drain a...
Features ; VDS = 0 Turn-off time VDD = 10 V; VGS = 0 ID = 12 mA; −VGSM = 12 V ID = 6 mA; −VGSM = 7 V ID = 3 mA; −VGSM = 5 V toff toff toff < < < 20 − − − 35 − − − 50 ns ns ns Crs < 3.5 3.5 3.5 pF Rds on < 30 60 100 Ω −V(P)GS > < 4 10 2 5 0.5 3 V V IDSS > 50 25 5 mA ± VDS max. 40 PMBF4392 40 PMBF4393 40 V April 1995 2 Philips Semiconductors Product speci...

Datasheet PDF File PMBF4392 Datasheet - 40.85KB
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