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PMBF107 Datasheet N-channel Enhancement Mode Vertical D-mos Transistor

Manufacturer: Philips Semiconductors (now NXP Semiconductors)

Overview: DISCRETE SEMICONDUCTORS DATA SHEET PMBF107 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification.

General Description

N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope and intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers.

PINNING - SOT23 PIN 1 2 3 gate source drain Top view MSB003 PMBF107 QUICK REFERENCE DATA SYMBOL VDS ID RDS(on) VGS(th) PARAMETER drain-source voltage drain current drain-source on-resistance gate-source threshold voltage DC value ID = 20 mA VGS = 2.6 V ID = 1 mA VGS = VDS CONDITIONS MAX.

UNIT 200 100 28 2.4 V mA Ω V PIN CONFIGURATION ndbook, halfpage 3 handbook, 2 columns d DESCRIPTION g 1 2 MBB076 - 1 s Fig.1 Simplified outline and symbol.

Key Features

  • Direct interface to C-MOS, TTL, etc.
  • High-speed switching.
  • No secondary breakdown.

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