PMBF107 Datasheet | Philips Semiconductors

FEATURES - Direct interface to C-MOS, TTL, etc. - High-speed switching - No secondary breakdown. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope and intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. PINNING - SOT23 PIN 1 2 3 gate source drain Top view MSB003 QUICK REFERENCE DATA SYMBOL VDS ID RDS(on) VGS(th) PARAMETER drain-source voltage drain current drain-source on-resistance gate-source threshold voltage DC value ID = 20 m A VGS = 2.6 V ID = 1 m A VGS = VDS CONDITIONS MAX. UNIT 200 100 28 2.4 V m A Ω V PIN CONFIGURATION ndbook, halfpage 3 handbook, 2 columns d DESCRIPTION g 1 2 MBB076 - 1 s Fig.1 Simplified outline and symbol. April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VDS ±VGSO ID IDM Ptot Tstg Tj Note 1. Device mounted on an FR4 printboard. THERMAL RESISTANCE SYMBOL Rth j-a Note 1. Device mounted on an FR4 printboard. PARAMETER from junction to ambient (note 1) PARAMETER drain-source voltage gate-source voltage drain current drain current total power dissipation storage temperature range junction temperature open drain DC value peak value Tamb = 25 °C (note 1) CONDITIONS MIN. - - - - - - 65 - PMBF107 MAX. 200 20 100 250 250 150 150 UNIT V V m A m A m W °C °C VALUE 500 UNIT K/W April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)DSS IDSS IDSX ±IGSS VGS(th) RDS(on) PARAMETER drain-source breakdown voltage drain-source leakage current drain cut-off current gate-source leakage current gate-source threshold voltage drain-source on-resistance CONDITIONS ID = 10 µA VGS = 0 VDS = 130 V VGS = 0 VDS = 70 V VGS = 0.2 V ±VGS = 15 V VDS = 0 ID = 1 m A VGS =...