MF1011B900Y transistor equivalent, microwave power transistor.
* Suitable for short and medium pulse applications up to 100 µs pulse width, duty factor 10%
* Diffused emitter ballasting resistors improve ruggedness
* Inte.
up to 100 µs pulse width, duty factor 10%
* Diffused emitter ballasting resistors improve ruggedness
* Interdigi.
Image gallery
Download